Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures
- 1 June 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (11) , 6247-6252
- https://doi.org/10.1063/1.1359756
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide triplerIEEE Transactions on Microwave Theory and Techniques, 2000
- Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layersIEEE Transactions on Electron Devices, 2000
- Record performance of a 250 GHz InP-basedheterostructure barrier varactor triplerElectronics Letters, 1999
- Type II and mixed type I–II radiative recombinations in AlInAs–InP heterostructuresJournal of Applied Physics, 1999
- Capacitance analysis for AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactor diodesJournal of Applied Physics, 1998
- Step-like heterostructure barrier varactorIEEE Transactions on Electron Devices, 1998
- DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactorIEEE Transactions on Electron Devices, 1995
- Planar doped barrier devices for subharmonic mixersMicrowave and Optical Technology Letters, 1991
- Effect of cathode spacer layer on the current-voltage characteristics of resonant tunneling diodesApplied Physics Letters, 1990
- Halbleitertheorie der SperrschichtThe Science of Nature, 1938