Configuration of dislocations in lateral overgrowth GaN films
- 22 April 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (9) , 6497-6501
- https://doi.org/10.1063/1.370110
Abstract
The dislocation distribution and emission profile of sublimation lateral overgrowth GaN and metalorganic chemical vapor deposition films have been studied using transmission electron microscopy and cathodoluminescence. A close relationship between the emission profile and the dislocation distribution has been observed. The results show that the dislocations not only affect the band edge emission, but also the yellow emission. It is observed that the dislocations propagate laterally in the overgrowth region. The mechanism of the change in the propagation direction of dislocations has been discussed.This publication has 15 references indexed in Scilit:
- Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation TechniqueJapanese Journal of Applied Physics, 1998
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaNJapanese Journal of Applied Physics, 1998
- Defect structure in selectively grown GaN films with low threading dislocation densityApplied Physics Letters, 1997
- Dislocation motion in GaN light-emitting devices and its effect on device lifetimeJournal of Applied Physics, 1997
- Nucleation Control in the Growth of Bulk GaN by Sublimation MethodJapanese Journal of Applied Physics, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxyApplied Physics Letters, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodesJournal of Applied Physics, 1994