Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
- 1 August 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (8R)
- https://doi.org/10.1143/jjap.37.4475
Abstract
The lateral overgrowth of thick GaN has been attempted using the sublimation method. The lateral overgrowth of 60 µm on SiO2 mask, which is about three times larger than the vertical growth, was obtained by one hour of growth at 995°C, with the stripe windows in the direction of GaN. Transmission electron microscopy (TEM) shows that the extension of threading dislocations is terminated at the SiO2/GaN interface. The dislocation density is about 109 cm-2 above the window areas, and is reduced to 106 cm-2 in the lateral overgrowth region on SiO2.Keywords
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