Phase diagram of GaAs
- 1 April 1990
- journal article
- Published by Taylor & Francis in High Pressure Research
- Vol. 4 (1) , 312-314
- https://doi.org/10.1080/08957959008246106
Abstract
Optical measurements in the diamond anvil cell (DAC) as well as thermodynamics, show cubic GaAs I to be unstable at 300 K, at 13 GPa. The thermodynamic phase line from GaAs I to the high pressure (H.P.) form(s) is at 11 ± 2 GPa. Large hyteresis makes the actual I→II transition observable only at 17.5 ± 1 GPa.Keywords
This publication has 9 references indexed in Scilit:
- Structural phase transitions in GaAs to 108 GPaPhysical Review B, 1989
- High-pressure phases of III-V zinc-blende semiconductorsPhysical Review B, 1987
- Diffraction studies of the high pressure phases of GaAs and GaPJournal of Applied Physics, 1982
- Density-functional calculation of static and dynamic properties of GaAsPhysical Review B, 1981
- High pressure phase transitions in tetrahedrally coordinated semiconducting compoundsSolid State Communications, 1978
- Pressure-induced phase transition in GaAs under shock compressionSolid State Communications, 1976
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973
- Melting and Polymorphism at High Pressures in Some Group IV Elements and III-V Compounds with the Diamond/Zincblende StructurePhysical Review B, 1963
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962