Area-controlled growth of InAs quantum dots and improvement of density and size distribution
- 20 November 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (21) , 3382-3384
- https://doi.org/10.1063/1.1327613
Abstract
We propose and demonstrate a scheme (area-controlled growth) for controlling where self-assembled InAs quantum dots form, using a SiO2 mask and selective area metalorganic chemical vapor deposition growth. Using this technique, quantum dots can be formed in only selected areas of a growth plane. However, in the regions where dots are formed there is variation of dot density and size along the mask stripe direction because of the diffusion of species in the vapor phase. We achieve more uniform distributions of dot density and size by changing the mask pattern. Using this growth technique, it is possible to fabricate integrated optical devices containing an external reflector together with quantum dots serving as the active layer of a semiconductor laser.Keywords
This publication has 14 references indexed in Scilit:
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substratesApplied Physics Letters, 1999
- Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dotsApplied Physics Letters, 1999
- A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substratesApplied Physics Letters, 1999
- Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask materialApplied Physics Letters, 1998
- Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laserApplied Physics Letters, 1996
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot LayerJapanese Journal of Applied Physics, 1996
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982