Valence-band states in diluted magnetic semiconductor quantum wires

Abstract
We present a theoretical study of the valence-band states in diluted magnetic semiconductor quantum wire structures. As a consequence of confinement in two directions, the hole states in a quantum wire are known to be mixtures of heavy- and light-hole components. Due to a strong p-d exchange interaction in diluted magnetic semiconductors, the relative contribution of these components is strongly affected by an external magnetic field B, a feature that is absent in nonmagnetic quantum wires. This leads, in turn, to a strong magnetic-field dependence of the probabilities of various optical dipole transitions in diluted magnetic semiconductor quantum wires. Numerical calculations performed for the case of Cd1xMnxTe/Cd1xyMnxMgyTe T-shaped quantum wires demonstrate the possibility to efficiently control the polarization characteristics of light emitted from such structrures by means of an external magnetic field B.