Radiation Effects upon Gallium Arsenide Devices
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 15 (6) , 306-310
- https://doi.org/10.1109/tns.1968.4325061
Abstract
The behavior of gallium arsenide Gunn oscillators, transistors, Schottky barrier diodes and optoelectronic pulse amplifier, were investigated in a flash X-ray environment. The damaging effects of fast neutrons from a pulsed reactor were also observed. When possible, the resultant data were compared with available data for similar silicon devices.Keywords
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