Influence of point defects on the lattice-site occupation of nonsoluble atoms implanted in vanadium
- 1 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (5) , 3499-3502
- https://doi.org/10.1103/physrevb.33.3499
Abstract
In situ channeling analysis showed that the temperature-dependent lattice occupancy for highly nonsoluble systems with rather high positive heat of solution (produced by ion implantation) is governed by the formation of impurity-vacancy complexes. The trapping probability of vacancies as well as the stability of the clusters against annihilation with mobile self-interstitial atoms are correlated with the calculated heat of solution indicating that these processes are governed by thermodynamic driving forces in the dynamic collision cascade. It is concluded that impurity-vacancy recombination and multivacancy trapping processes are the most important mechanisms which determine the lattice-site occupation of implanted ions in metals.Keywords
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