Substitutional doping during ion implantation

This publication has 11 references indexed in Scilit:

• ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS
  Applied Physics Letters, 1967
• Ion implantation as a production technique
  IEEE Transactions on Electron Devices, 1967
• Theory of "Supertails" of Ions Bombarded into Crystals
  Physical Review Letters, 1966
• IMPLANTATION PROFILES FOR 40-keV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES
  Applied Physics Letters, 1966
• Energy Loss and Range of Energetic Neutral Atoms in Solids
  Published by Elsevier ,1966
• Computer Studies of the Slowing Down of Energetic Atoms in Crystals
  Physical Review B, 1963
• Messung der Energie zur Verlagerung eines Gitteratoms durch Elektronensto in AIIIBV-Verbindungen *
  The European Physical Journal A, 1963
• Long-Range Channeling Effects in Irradiated Crystals
  Journal of Applied Physics, 1963
• Doping of Crystals by Ion Bombardment to Produce Solid State Detectors
  Review of Scientific Instruments, 1962
• The Displacement of Atoms in Solids by Radiation
  Reports on Progress in Physics, 1955