Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 278-279
- https://doi.org/10.1109/leos.1998.737838
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997