High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High power Al-free 808 nm laser barsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High continuous wave power, 0.8 μm-band, Al-free active-region diode lasersApplied Physics Letters, 1997
- High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layersPublished by SPIE-Intl Soc Optical Eng ,1996