A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 46-47
- https://doi.org/10.1109/leos.1996.565114
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High-power high-T0 native oxide stripe-geometry 980-nm laser diodesPublished by SPIE-Intl Soc Optical Eng ,1996
- Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasersIEEE Journal of Quantum Electronics, 1996
- High power aluminium-free InGaAsP/GaAs pumping diode lasersMaterials Science and Engineering: B, 1995
- Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs 0.8 µ m Separate Confinement Heterostructure LasersJapanese Journal of Applied Physics, 1995
- High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodesIEEE Photonics Technology Letters, 1995