High power aluminium-free InGaAsP/GaAs pumping diode lasers
- 1 December 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 35 (1-3) , 34-41
- https://doi.org/10.1016/0921-5107(95)01368-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodesApplied Physics Letters, 1994
- Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor depositionJournal of Applied Physics, 1994
- High-power laser diodes based on InGaAsP alloysNature, 1994
- The theory of strained-layer quantum-well lasers with bandgap renormalizationIEEE Journal of Quantum Electronics, 1994
- Lifetime extension of uncoated AlGaAs single quantumwell lasers by high powerburn-in in inert atmospheresElectronics Letters, 1994
- High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasersIEEE Journal of Quantum Electronics, 1991
- High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxyElectronics Letters, 1986
- Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1985
- Estimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection LaserJapanese Journal of Applied Physics, 1980
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956