High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
- 1 February 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (2) , 140-143
- https://doi.org/10.1109/68.345902
Abstract
Experimental results on tensile-strained Al/sub 0.3/Ga/sub 0.66/As-GaAs/sub 0.78/P/sub 0.22/ separate-confinement-heterostructure single-quantum-well (SCH-SQW) laser diodes are reported. Threshold current density as low as 260 A/cm 2 for broad-stripe lasers with a cavity length of 1500 μm has been observed. Broad-stripe devices have operated cw at room temperature with output power as high as 620 mW/facet. Ridge-waveguide lasers have exhibited cw threshold currents as low as 13.5 mA and output power of 90 mW. The output of the tensile-strained lasers is TM polarized.Keywords
This publication has 14 references indexed in Scilit:
- Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxyJournal of Crystal Growth, 1994
- Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum-well laser diodesApplied Physics Letters, 1994
- GaAs/sub 1-x/P/sub x//GaAs quantum-well structures with tensile-strained barriersIEEE Journal of Quantum Electronics, 1994
- Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasersIEEE Photonics Technology Letters, 1994
- Strained layer GaAs1−yPy-AlGaAs and InxGa1−xAs-AlGaAs quantum well diode lasersApplied Physics Letters, 1993
- Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasersApplied Physics Letters, 1991
- Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1991
- Polarization insensitive traveling wave type amplifier using strained multiple quantum well structureIEEE Photonics Technology Letters, 1990
- High-power conversion efficiency in a strained InGaAs/AlGaAs quantum well laserJournal of Applied Physics, 1989
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986