Strained layer GaAs1−yPy-AlGaAs and InxGa1−xAs-AlGaAs quantum well diode lasers

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Abstract
Separate confinement strained layer single quantum well diode lasers on GaAs substrates have been fabricated by low-pressure organometallic vapor phase epitaxy. Laser diode structures with a 90 Å quantum well under compressive strain, composed of InxGa1−xAs with x=0.00–0.17, as well as tensile strain, composed of GaAs1−yPy with y=0.00–0.29, have been studied. The emission wavelength ranges from λ=746 nm for y=0.29 up to λ=962 nm for x=0.17. The strain dependence of the threshold current for broad area devices is studied both experimentally and theoretically as a function of temperature. Regions of optimal laser performance, one for compressive and one for tensile strain, are identified.