New materials for diode laser pumping of solid-state lasers
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (4) , 942-951
- https://doi.org/10.1109/3.135213
Abstract
No abstract availableThis publication has 77 references indexed in Scilit:
- Efficient Cr,Nd:Gd3Sc2Ga3O12 laser at 1.06 μm pumped by visible GaInP/AlGaInP laser diodesApplied Physics Letters, 1991
- High performance 634 nm InGaP/InGaAlP strained quantum well lasersElectronics Letters, 1991
- High-power, very low threshold, GaInP/AlGaInP visible diode lasersApplied Physics Letters, 1991
- High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasersIEEE Journal of Quantum Electronics, 1991
- Short-wavelength InGaAlP visible laser diodesIEEE Journal of Quantum Electronics, 1991
- Low threshold current laser emitting at 637 nmElectronics Letters, 1991
- Effects of strained-layer structures on the threshold current density of AlGaInP/GaInP visible lasersApplied Physics Letters, 1991
- High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasersApplied Physics Letters, 1990
- High-power single mode InGaAs/AlGaAs laser diodes at 910 nmElectronics Letters, 1990
- High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990