Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum-well laser diodes
- 10 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2) , 158-160
- https://doi.org/10.1063/1.111956
Abstract
TE/TM mode switching is demonstrated in GaAsP/AlGaAs tensilely strained quantum-well laser diodes with two electrodes. The laser diode oscillated in the TM mode when current was injected into both electrodes, and oscillated in the TE mode when current was injected only into the longer electrode. The mode was switched by controlling the injection current of the two electrodes. The modulation efficiency of the TM-mode output selected by a polarizer was very high (15 W/A) in this mode switching.Keywords
This publication has 9 references indexed in Scilit:
- 780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasersElectronics Letters, 1993
- Polarization insensitive strained quantum well gain medium for lasers and optical amplifiersApplied Physics Letters, 1992
- Polarization switching and bistability in an external cavity laser with a polarization-sensitive saturable absorberApplied Physics Letters, 1991
- Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strainElectronics Letters, 1990
- Polarization insensitive traveling wave type amplifier using strained multiple quantum well structureIEEE Photonics Technology Letters, 1990
- Theoretical gain of strained-layer semiconductor lasers in the large strain regimeIEEE Journal of Quantum Electronics, 1989
- Polarization bistability in external cavity semiconductor lasersApplied Physics Letters, 1987
- Polarization control of an antireflection-coated GaAlAs laser diode by an external optical feedbackJournal of Applied Physics, 1982
- Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972