Energy-band structure for strainedp-typeSi1−xGex

Results of the valence-band structure in strained ${\mathrm{Si}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Ge}}_{\mathit{x}}$ are given as a function of the germanium content, x. The interactions between the ${\mathit{p}}_{3/2}$ and ${\mathit{p}}_{1/2}$ bands are taken into account by using a 6×6 Hamiltonian in the form of the ${\mathit{JM}}_{\mathit{J}}$ representation. The Hamiltonian is given in two parts, viz., the unstrained Hamiltonian of Dresselhaus, Kip, and Kittel, and the strained Hamiltonian of Kleiner and Roth. With this 6×6 Hamiltonian, the hole-energy spectrum for the two ${\mathit{p}}_{3/2}$ bands and the ${\mathit{p}}_{1/2}$ band is obtained; knowledge of which is crucial for determining pertinent electronic-transport data.