Formation of 10 nm Si structures using size-selected metal clusters
- 7 April 1998
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 31 (7) , L21-L24
- https://doi.org/10.1088/0022-3727/31/7/001
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Gas condensation source for production and deposition of size-selected metal clustersReview of Scientific Instruments, 1997
- Spontaneous production of 10-nm Si structures by plasma etching using self-formed masksApplied Physics Letters, 1997
- Diffusion and aggregation of size-selected silver clusters on a graphite surfaceApplied Physics Letters, 1996
- Deposition and growth of noble metal clusters on graphiteJ. Chem. Soc., Dalton Trans., 1996
- Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor depositionApplied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984