Modelling of passive elements for coplanar SiGe MMIC's
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1187-1190 vol.3
- https://doi.org/10.1109/mwsym.1995.406183
Abstract
As the first step in the development of coplanar SiGe MMIC's, modelling and experimental results on passive components are presented. The investigations demonstrate that parasitic effects induced by passivation of high-resistivity silicon substrates play an important role. Efficient CAD tools are developed and verified by comparison with measurements.Keywords
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