Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
- 8 January 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (2) , 231-233
- https://doi.org/10.1063/1.1432751
Abstract
The effect of the III/V ratio and growth temperature on the In incorporation has been studied in thick (>300 nm) InGaN layers, with In mole fractions from 19% to 37%, grown by molecular-beam epitaxy on sapphire and on GaN templates. Significant desorption of In occurs at growth temperatures above 550 °C. Symmetric and asymmetric reflections from high resolution X-ray diffraction reveals that the layers are not fully relaxed. A bowing parameter of 3.6 eV is calculated from optical absorption data, once corrected for strain-free band gap values. The increase of both, the absorption band-edge broadening and the photoluminescence full width at half maximum at room temperature with the In content, is discussed in terms of a strong In localization effect. This localization effect is further evidenced by the S-shaped temperature dependence of the emission energy.Keywords
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