Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data
- 1 January 1999
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 32 (10A) , A56-A60
- https://doi.org/10.1088/0022-3727/32/10a/312
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- GaN-based LEDs grown by molecular beam epitaxyPublished by SPIE-Intl Soc Optical Eng ,1998
- Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAsJournal of Applied Physics, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- MBE Growth of (In)GaN for LED ApplicationsMRS Proceedings, 1996
- Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well StructureMRS Proceedings, 1996
- GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1995
- New Approach in Equilibrium Theory for Strained Layer RelaxationPhysical Review Letters, 1994
- X-ray diffraction studies of thin films and multilayer structuresProgress in Crystal Growth and Characterization, 1989
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976