GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
- 1 November 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (11A) , L1429-1431
- https://doi.org/10.1143/jjap.34.l1429
Abstract
No abstract availableKeywords
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