Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si
- 1 August 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 230 (2) , 145-149
- https://doi.org/10.1016/0040-6090(93)90507-l
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Clockwise C-V hysteresis phenomena of metal–tantalum-oxide–silicon-oxide–silicon ( p) capacitors due to leakage current through tantalum oxideJournal of Applied Physics, 1987
- Influence of SiO2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitorsJournal of Applied Physics, 1987
- Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on SiJournal of the Electrochemical Society, 1987
- Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakageSolid-State Electronics, 1985
- Electrical Characteristics of Tantalum Pentoxide‐Silicon Dioxide‐Silicon StructuresJournal of the Electrochemical Society, 1985
- Electrical and charge storage characteristics of the tantalum oxide-silicon dioxide deviceIEEE Transactions on Electron Devices, 1978
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971