Positive-Ion Bombardment of Germanium and Silicon
- 1 December 1957
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 108 (5) , 1131-1136
- https://doi.org/10.1103/physrev.108.1131
Abstract
A very sensitive vacuum microbalance has been used to study the sputtering of germanium and silicon by argon ion bombardment. Current densities of 1 to 12 μa/ were used.
Keywords
This publication has 4 references indexed in Scilit:
- Bombardment of Various Elements by Hg+and A+IonsProceedings of the Physical Society. Section B, 1956
- Controlled Sputtering of Metals by Low-Energy Hg IonsPhysical Review B, 1956
- Auger Ejection of Electrons from Tungsten by Noble Gas IonsPhysical Review B, 1954
- Kathodenzerstäubung bei sehr geringen GasdrückenThe European Physical Journal A, 1930