Gap states, doping and bonding in tetrahedral amorphous carbon
- 1 May 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (5-6) , 637-640
- https://doi.org/10.1016/0925-9635(94)05295-6
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Hydrogen-free amorphous carbon preparation and propertiesDiamond and Related Materials, 1994
- Nitrogen doping of highly tetrahedral amorphous carbonPhysical Review B, 1993
- Complex dielectric function of amorphous diamond films deposited by pulsed-excimer-laser ablation of graphitePhysical Review B, 1993
- Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energyPhysical Review B, 1993
- Plasma motion in a filtered cathodic vacuum arcIEEE Transactions on Plasma Science, 1993
- n-type doping of highly tetrahedral diamond-like amorphous carbonJournal of Physics: Condensed Matter, 1993
- Pulsed laser deposition of diamond-like carbon filmsJournal of Applied Physics, 1992
- Compressive-stress-induced formation of thin-film tetrahedral amorphous carbonPhysical Review Letters, 1991
- Hard amorphous (diamond-like) carbonsProgress in Solid State Chemistry, 1991
- Subplantation model for film growth from hyperthermal species: Application to diamondPhysical Review Letters, 1989