Anisotropy in the growth rates of silicon deposited by reduction of silicon tetrachloride
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 290-298
- https://doi.org/10.1016/0022-0248(75)90143-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Defect-free nucleation of silicon on {111} silicon surfacesJournal of Crystal Growth, 1974
- Silicon epitaxial growthJournal of Crystal Growth, 1972
- Layer growth in silicon epitaxyJournal of Crystal Growth, 1972
- Surface Orientation Effect of the Shadow of the Stacking FaultJournal of Applied Physics, 1969