Reactive Ion Etching Damage to Shallow Junctions
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- MOS C-t Evaluation of Reactive Ion Etched Silicon SubstrateJapanese Journal of Applied Physics, 1984
- Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etchingApplied Physics Letters, 1984
- DLTS Study of RIE-Induced Deep Levels in Si Using p+n Diode ArraysJapanese Journal of Applied Physics, 1983
- The effects of processing on radiation damage in SiO2IEEE Transactions on Electron Devices, 1979
- Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °KJournal of Applied Physics, 1976