Realization of a Linear Germanium Nanowire p−n Junction
- 4 August 2006
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (9) , 2070-2074
- https://doi.org/10.1021/nl061338f
Abstract
Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p−n junction.Keywords
This publication has 11 references indexed in Scilit:
- Morphology of germanium nanowires grown in presence of B2H6Applied Physics Letters, 2006
- Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregationApplied Physics Letters, 2005
- Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon NanowiresScience, 2005
- One-dimensional heterostructures in semiconductor nanowhiskersApplied Physics Letters, 2002
- Growth of nanowire superlattice structures for nanoscale photonics and electronicsNature, 2002
- Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice NanowiresNano Letters, 2002
- Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building BlocksScience, 2001
- Low Temperature Chemical Vapor Deposition of Boron Doped Silicon FilmsJournal of the Electrochemical Society, 1973
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- Relation Between Surface Concentration and Average Conductivity in Diffused Layers in GermaniumBell System Technical Journal, 1961