A microstructural and compositional analysis of CuInSe2 ingots grown by the vertical Bridgman technique
- 1 February 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 171 (3-4) , 415-424
- https://doi.org/10.1016/s0022-0248(96)00695-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Structure and chemistry of CuInSe2 for solar cell technology: current understanding and recommendationsThin Solid Films, 1994
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991
- Changes in the opto-electronic properties of CuInSe2 following ion implantationJournal of Electronic Materials, 1991
- Relation between electrical properties and composition in CuInSe2 single crystalsSolar Cells, 1990
- The phase relations in the system Cu,In,SeJournal of Crystal Growth, 1988
- Phase relations in the ternary system Cu-In-SeJournal of Materials Science, 1987
- A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuumJournal of Crystal Growth, 1986
- The phase relations in the Cu,In,Se system and the growth of CuInSe2 single crystalsSolar Cells, 1986
- Phase relations in the Cu, In, Se system and the properties of CuInSe2 single crystalsApplied Physics Letters, 1984
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983