Photodiodes in silicon with an electrically-programmable UV response
- 1 June 1990
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 22 (1-3) , 559-563
- https://doi.org/10.1016/0924-4247(89)80035-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Flexible spectral-response shaping of silicon photodiodesSensors and Actuators, 1989
- Operation of the silicon colour filtering elementSensors and Actuators, 1989
- Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusionSolid-State Electronics, 1987
- Electron emission from depletion layers of silicon p-n junctionsJournal of Applied Physics, 1980
- Silicon p-n junction photodiodes sensitive to ultraviolet radiationIEEE Transactions on Electron Devices, 1979
- New profiled silicon photodetector for improved short-wavelength quantum efficiencyJournal of Applied Physics, 1979
- Silicon UV-Photodiodes Using Natural Inversion LayersPhysica Scripta, 1978
- Hot-electron emission from silicon into silicon dioxideSolid-State Electronics, 1978
- Quantum efficiency of the internal photoelectric effect in silicon and germaniumJournal of Applied Physics, 1976
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960