Electron emission from depletion layers of silicon p-n junctions
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7) , 3780-3785
- https://doi.org/10.1063/1.328114
Abstract
Measurements of the energy distribution of electrons emitted in vacuum by very shallow silicon p‐n junctions are described. It has been found that diodes with the junction perpendicular to the surface show a relatively narrow peak and a broad band, while diodes with the junction parallel to the surface only give a narrow peak (half‐width 0.50 eV). The broad band is ascribed to electrons emitted from the depletion layer of the junction, and the narrow peak is attributed to electrons emitted from the neutral n layer.This publication has 18 references indexed in Scilit:
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