Some properties of reverse-biased silicon carbide p - n junction cold cathodes

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Abstract
An analysis is made of the changes occurring in the electrical characteristics of reverse-biased p-n junction electron emitters in SiC during the development of emission. The functional dependence of the emission on the junction voltage, current, mean cathode temperature and extraction field is investigated, and it is shown that the emission is directly proportional to the surface component of the junction current, which can be separated from the bulk current through the p-n junction. Emission is developed at points along the p-n junction by thermal processing, the magnitude of which determines the level of the emission, which is then stable at all lower values of power dissipation. The possibility of increasing the emission by pulsing the junction current is also examined.

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