Activation of a multi-emitter silicon carbide p-n junction cold cathode

Publisher Website
Google Scholar
Abstract
A technique is described for fabricating a novel type of cold cathode comprising an array of electron emitters formed from a single p-n junction of silicon carbide. Two methods are described for developing emission from such a cathode, one of which involves running the cathode under reverse bias and the other heating under forward bias. The latter method appears more suitable for collectively activating a multi-emitter cathode, since it enables a high level of emission to be obtained in a relatively short time. The former method is slow and attempts to increase the rate of activation result in breakdown of the emitting elements. The effectiveness of these two methods has been assessed in terms of the emission and junction characteristics. Life tests show the activated cathode to be remarkably stable, although it is found to exhibit appreciable but reversible changes in emission level in the presence of certain contaminants.

This publication has 3 references indexed in Scilit: