Modelling of channel enhancement effects on the write characteristics of FAMOS devices
- 1 November 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (11) , 965-968
- https://doi.org/10.1016/0038-1101(76)90111-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Functional modelling of non-volatile MOS memory devicesSolid-State Electronics, 1976
- Avalanche-injected electron currents in SiO2 at high injection densitiesSolid-State Electronics, 1974
- Famos—A new semiconductor charge storage deviceSolid-State Electronics, 1974
- Reversible floating-gate memoryJournal of Applied Physics, 1973
- Channel Shortening in MOS Transistors during Junction Walk-OutApplied Physics Letters, 1971
- MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTUREApplied Physics Letters, 1971