Functional modelling of non-volatile MOS memory devices

This publication has 25 references indexed in Scilit:

• Interfacial Dopants for Dual-Dielectric, Charge-Storage Cells
  Bell System Technical Journal, 1974
• Atmos—An electrically reprogrammable read-only memory device
  IEEE Transactions on Electron Devices, 1974
• Famos—A new semiconductor charge storage device
  Solid-State Electronics, 1974
• Reversible floating-gate memory
  Journal of Applied Physics, 1973
• Memory behavior of metal-plasma-anodized Al2O3 and SiO2-semiconductor (MAOS) capacitors
  Applied Physics Letters, 1973
• Electrically reprogrammable nonvolatile semiconductor memory
  IEEE Journal of Solid-State Circuits, 1972
• Carrier transport and storage effects in Au ion implanted SiO2 structures
  Solid-State Electronics, 1972
• MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE
  Applied Physics Letters, 1971
• READ-ONLY memory using MAS transistors
  IEEE Journal of Solid-State Circuits, 1970
• A Floating Gate and Its Application to Memory Devices
  Bell System Technical Journal, 1967