MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE
- 15 April 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (8) , 332-334
- https://doi.org/10.1063/1.1653685
Abstract
A novel charge‐storage structure is described. The floating‐gate avalanche‐injection MOS (FAMOS) structure is shown to exhibit memory behavior in the form of long‐term charge storage on the floating conductive gate of an insulated gate field‐effect device. Charge is stored in the floating polysilicon gate by avalanche injection of electrons from an underlying p‐n junction.Keywords
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