Photon-induced recovery of photoquenched EL2 intracenter absorption in GaAs
- 15 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (24) , 1751-1753
- https://doi.org/10.1063/1.97736
Abstract
After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon‐induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.Keywords
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