Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications
Open Access
- 1 May 1999
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 14 (5) , 2043-2052
- https://doi.org/10.1557/jmr.1999.0276
Abstract
A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNxfrom the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNxwith contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.Keywords
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