Deep reactive ion etching characteristics of a macromachined chemical reactor
- 1 March 2003
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 21 (2) , 912-915
- https://doi.org/10.1116/1.1560162
Abstract
While deep reactive ion etching using an inductively coupled plasma(ICP)source has proven to be a boon to the fabrication of silicon-based microelectromechanical systems, the process is highly sensitive to the geometry of any given device and needs to be modified accordingly. For a chemical microreactor involving fluidic structures of highly varying geometry on the same device, the implementation of ICPetching can be especially challenging. We present the results of a study of one such implementation.Keywords
This publication has 6 references indexed in Scilit:
- Loading effects in deep silicon etchingPublished by SPIE-Intl Soc Optical Eng ,2000
- Silicon micro-accelerometer with mg resolution, high linearity and large frequency bandwidth fabricated with two mask bulk processSensors and Actuators A: Physical, 1999
- Pattern shape effects and artefacts in deep silicon etchingJournal of Vacuum Science & Technology A, 1999
- Deep anisotropic etching of siliconJournal of Vacuum Science & Technology A, 1999
- Microscopic uniformity in plasma etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenchesJournal of Vacuum Science & Technology B, 1990