Deep anisotropic etching of silicon
- 1 July 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (4) , 2270-2273
- https://doi.org/10.1116/1.581759
Abstract
We are interested in etching very deep anisotropic trenches (∼100 μm) with high aspect ratios (depth/width) (∼20–50) and high etch rates (∼5 μm/min). A high density plasma helicon reactor using SF6/O2 chemistry and a cryogenic chuck has been used for etching very narrow trenches from 1.2 to 10 μm wide on n-type Si wafers with a SiO2 mask. The first results show significant features that demonstrate the feasibility of this method. Two-micron-wide trenches have been etched to a depth of 80 μm at an average etch rate of 2.7 μm/min. The resulting profiles are highly anisotropic and selectivity of Si/SiO2 is remarkably high (>500).This publication has 6 references indexed in Scilit:
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