Highly doped 1.55 µm Ga x In 1- x As/InPdistributed Bragg reflector stacks
- 1 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (18) , 1526-1527
- https://doi.org/10.1049/el:19941055
Abstract
The authors have investigated 20 period lattice matched mirror stacks doped to 5 × 1018 cm-1 and 1019 cm-1 at 1.55 µm in GaxIn1-xAs/InP and have obtained greater than 95% reflectivity over 100 nm and peak reflectivities up to 98%.Keywords
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