A study on IGBT's steady state SOA with newly developed simulation

Publisher Website

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 34-38
https://doi.org/10.1109/ispsd.1992.991233

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs
IEEE Transactions on Electron Devices, 1991
Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's
IEEE Transactions on Electron Devices, 1987
The COMFET—A new high conductance MOS-gated device
IEEE Electron Device Letters, 1983