Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (2) , 351-355
- https://doi.org/10.1109/t-ed.1987.22929
Abstract
This paper reports the safe operating area (SOA) for 1200-V nonlatchup bipolar-mode MOSFET's. The measured SOA limit, in terms of current density and drain-voltage product, reached 2.5 × 10 5 W/cm 2 for 125°C-case temperature and 10-µs pulse operation conditions. It exceeded even the so-called "avalanche limit" for n-p-n bipolar transistors when the measurement was carried out under 25°C-case temperature conditions. These SOA's enable device protection from an abnormally large drain-current surge.Keywords
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