First diamond power FET structure
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurementsApplied Physics Letters, 1996
- Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamondsApplied Physics Letters, 1994