Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

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Abstract
Enhancement mode‐type metal‐semiconductor field effect transistors using diamond have been fabricated. The transistor operation is based on the control of surface p‐type conduction of a hydrogen terminated homoepitaxial layer. Boron doping was not used for the conduction. An aluminum contact is used for the Schottky gate and gold ohmic contacts are used for the source and drain. The obtained transconductance is 20–200 μs/mm using aluminum gates of 10–40 μm in length. The active region on the homoepitaxial layer is thin enough for the total depletion of carriers when the gate bias is zero.