Design of a semiconductor ferromagnet in a quantum-dot artificial crystal
Open Access
- 4 June 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (23) , 3702-3704
- https://doi.org/10.1063/1.1376434
Abstract
We present the theoretical design of quantum-dot (QD) artificial ferromagnetic crystals. The electronic structure calculations based on local spin density approximation show that our designed QD artificial crystal from a structure comprising the crossing 0.104 µm wide InAs quantum wires (an effective Kagome lattice) has flat band characteristics. Our examined QD artificial crystal has the ferromagnetic ground state when the flat band is half filled, even though it contains no magnetic elements. The ferromagnetic and paramagnetic states can be freely switched by changing the electron filling via a gate voltageKeywords
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This publication has 20 references indexed in Scilit:
- Ferromagnetism in Semiconductor Dot ArrayJapanese Journal of Applied Physics, 2000
- Spontaneous Emission Spectrum in Double Quantum Dot DevicesScience, 1998
- Microwave spectroscopy of a quantum-dot moleculeNature, 1998
- Shell Filling and Spin Effects in a Few Electron Quantum DotPhysical Review Letters, 1996
- Electrons in artificial atomsNature, 1996
- Collective Coulomb blockade in an array of quantum dots: A Mott-Hubbard approachPhysical Review Letters, 1994
- Ferromagnetism in the Hubbard models with degenerate single-electron ground statesPhysical Review Letters, 1992
- Ferromagnetic ground states for the Hubbard model on line graphsJournal of Physics A: General Physics, 1991
- Possibility of Magnetic Ordered States in Semiconductor Quantum Dot SystemJapanese Journal of Applied Physics, 1990
- Two theorems on the Hubbard modelPhysical Review Letters, 1989