A model for excess base noise in bipolar junction transistors
- 29 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2) , 135-141
- https://doi.org/10.1016/0038-1101(88)90120-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Excess base noise in the bipolar junction transistorSolid-State Electronics, 1985
- The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometriesIEEE Transactions on Electron Devices, 1964
- Noise in Junction TransistorsProceedings of the IRE, 1958