Gold-based ohmic contacts on III–V compounds: Thermally induced reactions between metallization and the semiconductor compound
- 1 August 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 130 (3-4) , 231-236
- https://doi.org/10.1016/0040-6090(85)90354-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAsJournal of Applied Physics, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- The role of germanium in evaporated AuGe ohmic contacts to GaAsSolid-State Electronics, 1983
- Structural study of alloyed gold metallization contacts on InGaAsP/InP layersJournal of Applied Physics, 1982
- Au/Be ohmic contacts to p-type indium phosphideSolid-State Electronics, 1982
- Characteristics of AuGeNi ohmic contacts to GaAsSolid-State Electronics, 1982
- On the formation of binary compounds in Au/InP systemJournal of Applied Physics, 1981
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981