Electronically induced dislocation glide motion in hexagonal GaN single crystals
- 1 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 134-139
- https://doi.org/10.1016/s0921-4526(99)00424-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electron microscopy of dislocations introduced into GaN by plastic deformationPhilosophical Magazine Letters, 1999
- Influence of deformation on the luminescence of GaN epitaxial filmsSemiconductor Science and Technology, 1998
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaNJapanese Journal of Applied Physics, 1998
- Mechanical Properties and Dislocation Dynamics in III-V CompoundsJournal de Physique III, 1997
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Recombination enhanced dislocation glide in silicon carbide observed in-situ by transmission electron microscopyMicroscopy Microanalysis Microstructures, 1993
- Electron-beam irradiation enhanced dislocation glide in GaAs observed by transmission electron microscopyJournal of Applied Physics, 1984
- Dynamic defect reactions induced by multiphonon nonradiative recombination of injected carriers at deep levels in semiconductorsPhysical Review B, 1984
- Method of Evaluating Geometrical‐Statistical Parameters of the Interaction between Dislocations and Point Obstacles from Electron MicrographsCrystal Research and Technology, 1979
- Theory of recombination-enhanced defect reactions in semiconductorsPhysical Review B, 1975